PART |
Description |
Maker |
BLS6G2731P-200 |
LDMOS S-Band radar pallet amplifier
|
NXP Semiconductors N.V.
|
BLS6G2731S-120 BLS6G2731-120 |
LDMOS S-band radar power transistor
|
NXP Semiconductors N.V.
|
BLS6G2933P-200 |
LDMOS S-Band radar pallet amplifier 2900 MHz - 3300 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors N.V.
|
BLL6H0514-25 |
LDMOS driver transistor BLL6H0514-25<SOT467C (LDMOST)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,; LDMOS driver transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
AM82731-012 2767 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS From old datasheet system RF & Microwave Transistors S-Band Radar Applications(用于S波段雷达脉冲输出和驱动的RF和微波晶体管)
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
AM82731-006 2884 |
From old datasheet system RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
AM82731-025 2768 |
From old datasheet system RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
1214-550P |
550 Watts - 300楼矛s, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz 550 Watts - 300μs, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
MS2228 |
RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
XAM1214-130 AM1214-130 |
RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|